半导体原厂现货，半导体相关型号PDF资料_第2页

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型号	制造商	描述	参考价格	库存数量
MT3S113P(TE12L,F)	Toshiba	射频(RF)双极晶体管 RF Bipolar Transistor .1A 1.6W PDF数据手册	1:¥7.6049 10:¥6.0681 100:¥4.6669 500:¥4.1132 1,000:¥3.2544	参考库存:36526
2SK3475TE12LF	Toshiba	射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch Radio Freq 1A 3W 20V VDSS PDF数据手册	1:¥17.4472 10:¥14.0572 100:¥11.2209 500:¥9.831 1,000:¥8.1473	参考库存:6441
2SK3078A(TE12L,F)	Toshiba	射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch Radio Freq 0.5 3W 10V VDSS PDF数据手册	1:¥11.4469 10:¥9.2208 100:¥7.0738 500:¥6.2263 1,000:¥4.9155	参考库存:4878
2SK3079ATE12LQ	Toshiba	射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch Radio Freq 3A 20W 10V VDSS PDF数据手册	1,000:¥9.379 2,000:¥8.6784 5,000:¥8.3733 10,000:¥8.0682	参考库存:35850
MT3S16U(TE85L,F)	Toshiba	射频(RF)双极晶体管 RF 50mW 5.5dB 10V USM 60mA 2GHz PDF数据手册	1:¥4.2262 10:¥2.3278 100:¥0.99892 1,000:¥0.7684 3,000:¥0.58421	参考库存:14725
2SC5087YTE85LF	Toshiba	射频(RF)双极晶体管 Radio-Freq Bipolar 80mA 150mW 12V PDF数据手册	1:¥3.5369 10:¥2.3165 100:¥1.2882 1,000:¥0.94468 3,000:¥0.81473	参考库存:8120
2SK3756(TE12L,F)	Toshiba	射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch Radio Freq 1A 3W 7V VDSS PDF数据手册	1:¥12.9046 10:¥10.3734 100:¥8.2942 500:¥7.2546 1,000:¥6.0116	参考库存:7182
2SK3476(TE12L,Q)	Toshiba	射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch Radio Freq 1A 3W 20V VDSS PDF数据手册	1:¥45.7989 10:¥36.8041 100:¥33.5836 250:¥30.2727 1,000:¥22.8938	参考库存:5807
2SC5108-Y,LF	Toshiba	射频(RF)双极晶体管 Radio-frequency Bipolar Transistor PDF数据手册	1:¥3.616 10:¥2.3843 100:¥1.3786 1,000:¥0.99892 3,000:¥0.84524	参考库存:10957
2SK3074TE12LF	Toshiba	射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch Radio Freq 1A 3W 30V VDSS PDF数据手册	1:¥22.4418 10:¥18.0574 100:¥14.4414 500:¥12.6786 1,000:¥10.5316	参考库存:56126
MT3S113TU,LF	Toshiba	射频(RF)双极晶体管 RF Bipolar Transistor .1A 900mW PDF数据手册	1:¥5.6839 10:¥4.3618 100:¥2.8137 1,000:¥2.2487 3,000:¥1.9097	参考库存:34808
MT3S113(TE85L,F)	Toshiba	射频(RF)双极晶体管 RF Bipolar Transistor .1A 800mW PDF数据手册	3,000:¥2.0792 9,000:¥2.0001 24,000:¥1.921 45,000:¥1.8984	参考库存:34614